Method for transmitting and receiving signal by terminal supporting dual-connectivity between e-utra and nr and terminal performing the method

ABSTRACT

Provided is a method for transmitting and receiving a signal by a terminal supporting dual-connectivity between evolved universal terrestrial radio access (E-UTRA) and new radio (NR). In the method, when the terminal is configured to aggregate at least two carriers and when the at least two carriers include one of E-UTRA operating bands 1, 3, 19, and 21 and at least one of NR operating bands n78 and n79, an uplink center frequency of a first carrier among the at least two carriers is a first value and a downlink center frequency of the first carrier is a second value, a predetermined maximum sensitivity degradation (MSD) is applied to a reference sensitivity used for reception of the downlink signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/320,181, filed on Jan. 24, 2019, which is a National Stage filingunder 35 U.S.C. 371 of International Application No. PCT/KR2018/010063,filed on Aug. 30, 2018, which claims the benefit of U.S. ProvisionalApplications No. 62/557,014 filed on Sep. 11, 2017, No. 62/566,345 filedon Sep. 30, 2017, No. 62/630,267 filed on Feb. 14, 2018, and KoreanPatent Application No. 10-2018-0054665 filed on May 14, 2018, thecontents of which are all hereby incorporated by reference herein intheir entirety.

BACKGROUND OF THE INVENTION Field of the Invention

The present invention relates to mobile communication

Related Art

With the success of long term evolution (LTE)/LTE-A (LTE-Advanced) forthe 4th generation mobile communication, more interest is rising to thenext generation, i.e., 5th generation (also known as 5G) mobilecommunication and extensive research and development are being carriedout accordingly

The 5^(th)-generation mobile telecommunications defined by theInternational Telecommunication Union (ITU) refers to providing a datatransfer rate of up to 20 Gbps and a perceptible transfer rate of atleast 100 Mbps anywhere. The 5^(th)-generation mobiletelecommunications, whose official name is ‘IMT-2020’, is aimed to becommercialized worldwide in 2020.

ITU proposes three usage scenarios, for example, enhanced mobilebroadband (eMBB), massive machine type communication (mMTC), and ultra-reliable and low latency communications (URLLC).

First, URLLC relates to a usage scenario which requires high reliabilityand low latency. For example, services such as autonomous driving,factory automation, augmented reality require high reliability and lowlatency (e.g., a delay time of 1 ms or less). Currently, latency of 4G(LTE) is statistically 21 to 43 ms (best 10%) and 33 to 75ms (median).This is not enough to support a service requiring latency of 1 ms orless.

Next, the eMBB usage scenario refers to a usage scenario requiringmobile ultra-wideband. This ultra-wideband high-speed service isunlikely to be accommodated by core networks designed for existingLTE/LTE-A. Thus, in the so-called 5th-generation mobile communication,core networks are urgently required to be re-designed.

Meanwhile, in the 5th generation mobile communication, a scheme (EN-DC)of dually connecting LTE and NR is underway to ensure communicationstability. However, in a state in which a downlink carrier using LTE anda downlink carrier using NR are aggregated, transmission of an uplinksignal may cause a harmonic component and an intermodulation distortion(IMD) component to impact on a downlink band of a terminal itself.

SUMMARY OF THE INVENTION

In an aspect, provided is a method for transmitting and receiving asignal by a terminal supporting dual-connectivity between evolveduniversal terrestrial radio access (E-UTRA) and new radio (NR). Themethod may comprise transmitting, when the terminal is configured toaggregate at least two carriers, an uplink signal using uplink of the atleast two carriers; and receiving a downlink signal using downlink ofthe at least two carriers, wherein when the at least two carriersinclude one of E-UTRA operating bands 1, 3, 19, and 21 and at least oneof NR operating bands n78 and n79, an uplink center frequency of a firstcarrier among the at least two carriers is a first value and a downlinkcenter frequency of the first carrier is a second value, a predeterminedmaximum sensitivity degradation (MSD) is applied to a referencesensitivity used for reception of the downlink signal.

When the at least two carriers are the E-UTRA operating band 21 and theNR operating band n79, the first carrier corresponds to the E-UTRAoperating band 21, the first value corresponds to 1457.5 MHz, and thesecond value corresponds to 1505.5 MHz, the MSD value is 18.4 dB.

When the at least two carriers are the E-UTRA operating band 1 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n79, the first value corresponds to 4870 MHz, and thesecond value corresponds to 4870 MHz, the MSD value is 15.9 dB.

When the at least two carriers are the E-UTRA operating band 1 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n78, the first value corresponds to 3490 MHz, and thesecond value corresponds to 3490 MHz, the MSD value is 4.6 dB.

When the at least two carriers are the E-UTRA operating band 3 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n79, the first value corresponds to 4910 MHz, and thesecond value corresponds to 4910 MHz, the MSD value is 16.3 dB.

When the at least two carriers are the E-UTRA operating band 3 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n78, the first value corresponds to 3710 MHz, and thesecond value corresponds to 3710 MHz, the MSD value is 4.2 dB.

When the at least two carriers are the E-UTRA operating band 19 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n79, the first value corresponds to 4515 MHz, and thesecond value corresponds to 4515 MHz, the MSD value is 29.3 dB.

When the at least two carriers are the E-UTRA operating band 19 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n78, the first value corresponds to 3715 MHz, and thesecond value corresponds to 3715 MHz, the MSD value is 28.8 dB.

When the at least two carriers are the E-UTRA operating band 21 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n79, the first value corresponds to 4873 MHz, and thesecond value corresponds to 4873 MHz, the MSD value is 30.1 dB.

When the at least two carriers are the E-UTRA operating band 19 and theNR operating bands n78 and n79, the first carrier corresponds to the NRoperating band n78, the first value corresponds to 3487 MHz, and thesecond value corresponds to 3487 MHz, the MSD value is 29.8 dB.

In another aspect, provided is also a terminal supportingdual-connectivity between evolved universal terrestrial radio access(E-UTRA) and new radio (NR). The terminal may comprises a transceivertransmitting an uplink signal and receiving a downlink signal; and aprocessor controlling the transceiver, wherein when the terminal isconfigured to aggregate at least two carriers, the processor transmitsthe uplink signal using uplink of the at least two carriers; andreceives the downlink signal using downlink of the at least twocarriers, and when the at least two carriers include one of E-UTRAoperating bands 1, 3, 19, and 21 and at least one of NR operating bandsn78 and n79, an uplink center frequency of a first carrier among the atleast two carriers is a first value and a downlink center frequency ofthe first carrier is a second value, a predetermined maximum sensitivitydegradation (MSD) is applied to a reference sensitivity used forreception of the downlink signal.

According to a disclosure of the present invention, the above problem ofthe related art is solved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a wireless communication system.

FIG. 2 illustrates the architecture of a radio frame according tofrequency division duplex (FDD) of 3rd generation partnership project(3GPP) long term evolution (LTE).

FIG. 3 illustrates an example resource grid for one uplink or downlinkslot in 3GPP LTE.

FIG. 4 illustrates the architecture of a downlink subframe.

FIG. 5 illustrates the architecture of an uplink subframe in 3GPP LTE.

FIGS. 6A and 6B are conceptual views illustrating intra-band carrieraggregation (CA).

FIGS. 7A and 7B are conceptual views illustrating inter-band carrieraggregation (CA).

FIG. 8 illustrates a situation where a harmonic component andintermodulation distortion (IMD) are introduced into downlink band whenuplink signal is transmitted through two uplink carriers.

FIG. 9 shows a scenario in which a 5G NR band and an LTE E-UTRA band of6 GHz or lower may coexist in a 5G NR non-standalone UE.

FIG. 10 is a block diagram illustrating a wireless communication systemin which a disclosure of the present specification is implemented.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, based on 3rd Generation Partnership Project (3GPP) longterm evolution (LTE) or 3GPP LTE-advanced (LTE-A), the present inventionwill be applied. This is just an example, and the present invention maybe applied to various wireless communication systems. Hereinafter, LTEincludes LTE and/or LTE-A.

The technical terms used herein are used to merely describe specificembodiments and should not be construed as limiting the presentinvention. Further, the technical terms used herein should be, unlessdefined otherwise, interpreted as having meanings generally understoodby those skilled in the art but not too broadly or too narrowly.Further, the technical terms used herein, which are determined not toexactly represent the spirit of the invention, should be replaced by orunderstood by such technical terms as being able to be exactlyunderstood by those skilled in the art. Further, the general terms usedherein should be interpreted in the context as defined in thedictionary, but not in an excessively narrowed manner.

The expression of the singular number in the specification includes themeaning of the plural number unless the meaning of the singular numberis definitely different from that of the plural number in the context.In the following description, the term ‘include’ or ‘have’ may representthe existence of a feature, a number, a step, an operation, a component,a part or the combination thereof described in the specification, andmay not exclude the existence or addition of another feature, anothernumber, another step, another operation, another component, another partor the combination thereof.

The terms ‘first’ and ‘second’ are used for the purpose of explanationabout various components, and the components are not limited to theterms ‘first’ and ‘second’. The terms ‘first’ and ‘second’ are only usedto distinguish one component from another component. For example, afirst component may be named as a second component without deviatingfrom the scope of the present invention.

It will be understood that when an element or layer is referred to asbeing “connected to” or “coupled to” another element or layer, it may bedirectly connected or coupled to the other element or layer orintervening elements or layers may be present. In contrast, when anelement is referred to as being “directly connected to” or “directlycoupled to” another element or layer, there are no intervening elementsor layers present.

Hereinafter, exemplary embodiments of the present invention will bedescribed in greater detail with reference to the accompanying drawings.In describing the present invention, for ease of understanding, the samereference numerals are used to denote the same components throughout thedrawings, and repetitive description on the same components will beomitted. Detailed description on well-known arts which are determined tomake the gist of the invention unclear will be omitted. The accompanyingdrawings are provided to merely make the spirit of the invention readilyunderstood, but not should be intended to be limiting of the invention.It should be understood that the spirit of the invention may be expandedto its modifications, replacements or equivalents in addition to what isillustrated in the drawings.

As used herein, ‘base station’ generally refers to a fixed station thatcommunicates with a wireless device and may be denoted by other termssuch as eNB (evolved-NodeB), BTS (base transceiver system), or accesspoint.

As used herein, user equipment (UE) may be stationary or mobile, and maybe denoted by other terms such as device, wireless device, terminal,MS(mobile station), UT(user terminal), SS(subscriber station), MT(mobileterminal) and etc.

FIG. 1 illustrates a wireless communication system.

Referring to FIG. 1, the wireless communication system includes at leastone base station (BS) 20. Respective BSs 20 provide a communicationservice to particular geographical areas 20 a, 20 b, and 20 c (which aregenerally called cells).

The UE generally belongs to one cell and the cell to which the terminalbelong is referred to as a serving cell. A base station that providesthe communication service to the serving cell is referred to as aserving BS. Since the wireless communication system is a cellularsystem, another cell that neighbors to the serving cell is present.Another cell which neighbors to the serving cell is referred to aneighbor cell. A base station that provides the communication service tothe neighbor cell is referred to as a neighbor BS. The serving cell andthe neighbor cell are relatively decided based on the UE.

Hereinafter, a downlink means communication from the base station 20 tothe terminal 10 and an uplink means communication from the terminal 10to the base station 20. In the downlink, a transmitter may be a part ofthe base station 20 and a receiver may be a part of the terminal 10. Inthe uplink, the transmitter may be a part of the terminal 10 and thereceiver may be a part of the base station 20.

Hereinafter, the LTE system will be described in detail.

FIG. 2 shows a downlink radio frame structure according to FDD of 3rdgeneration partnership project (3GPP) long term evolution (LTE).

The radio frame of FIG. 2 may be found in the section 5 of 3GPP TS36.211 V10.4.0 (2011-12) “Evolved Universal Terrestrial Radio Access(E-UTRA); Physical Channels and Modulation (Release 10)”.

Referring to FIG. 2, the radio frame consists of 10 subframes. Onesubframe consists of two slots. Slots included in the radio frame arenumbered with slot numbers 0 to 19. A time required to transmit onesubframe is defined as a transmission time interval (TTI). The TTI maybe a scheduling unit for data transmission. For example, one radio framemay have a length of 10 milliseconds (ms), one subframe may have alength of 1 ms, and one slot may have a length of 0.5 ms.

The structure of the radio frame is for exemplary purposes only, andthus the number of subframes included in the radio frame or the numberof slots included in the subframe may change variously.

Meanwhile, one slot may include a plurality of OFDM symbols. The numberof OFDM symbols included in one slot may vary depending on a cyclicprefix (CP).

FIG. 3 illustrates an example resource grid for one uplink or downlinkslot in 3GPP LTE.

Referring to FIG. 3, the uplink slot includes a plurality of OFDM(orthogonal frequency division multiplexing) symbols in the time domainand NRB resource blocks (RBs) in the frequency domain. For example, inthe LTE system, the number of resource blocks (RBs), i.e., NRB, may beone from 6 to 110.

Resource block (RB) is a resource allocation unit and includes aplurality of sub-carriers in one slot. For example, if one slot includesseven OFDM symbols in the time domain and the resource block includes 12sub-carriers in the frequency domain, one resource block may include7×12 resource elements (REs).

Meanwhile, the number of sub-carriers in one OFDM symbol may be one of128, 256, 512, 1024, 1536, and 2048.

In 3GPP LTE, the resource grid for one uplink slot illustrated in FIG. 4may also apply to the resource grid for the downlink slot.

FIG. 4 illustrates the architecture of a downlink sub-frame.

In FIG. 4, assuming the normal CP, one slot includes seven OFDM symbols,by way of example.

The DL (downlink) sub-frame is split into a control region and a dataregion in the time domain. The control region includes up to first threeOFDM symbols in the first slot of the sub-frame. However, the number ofOFDM symbols included in the control region may be changed. A PDCCH(physical downlink control channel) and other control channels areallocated to the control region, and a PDSCH is allocated to the dataregion.

The physical channels in 3GPP LTE may be classified into data channelssuch as PDSCH (physical downlink shared channel) and PUSCH (physicaluplink shared channel) and control channels such as PDCCH (physicaldownlink control channel), PCFICH (physical control format indicatorchannel), PHICH (physical hybrid-ARQ indicator channel) and PUCCH(physical uplink control channel).

The PCFICH transmitted in the first OFDM symbol of the sub-frame carriesCIF (control format indicator) regarding the number (i.e., size of thecontrol region) of OFDM symbols used for transmission of controlchannels in the sub-frame. The wireless device first receives the CIF onthe PCFICH and then monitors the PDCCH.

Unlike the PDCCH, the PCFICH is transmitted through a fixed PCFICHresource in the sub-frame without using blind decoding. The PHICHcarries an ACK (positive-acknowledgement)/NACK(negative-acknowledgement) signal for a UL HARQ (hybrid automatic repeatrequest). The ACK/NACK signal for UL (uplink) data on the PUSCHtransmitted by the wireless device is sent on the PHICH.

The PBCH (physical broadcast channel) is transmitted in the first fourOFDM symbols in the second slot of the first sub-frame of the radioframe. The PBCH carries system information necessary for the wirelessdevice to communicate with the base station, and the system informationtransmitted through the PBCH is denoted MIB (master information block).In comparison, system information transmitted on the PDSCH indicated bythe PDCCH is denoted SIB (system information block).

The PDCCH may carry activation of VoIP (voice over internet protocol)and a set of transmission power control commands for individual UEs insome UE group, resource allocation of an upper layer control messagesuch as a random access response transmitted on the PDSCH, systeminformation on DL-SCH, paging information on PCH, resource allocationinformation of UL-SCH (uplink shared channel), and resource allocationand transmission format of DL-SCH (downlink-shared channel). A pluralityof PDCCHs may be sent in the control region, and the terminal maymonitor the plurality of PDCCHs. The PDCCH is transmitted on one CCE(control channel element) or aggregation of some consecutive CCEs. TheCCE is a logical allocation unit used for providing a coding rate perradio channel's state to the PDCCH. The CCE corresponds to a pluralityof resource element groups. Depending on the relationship between thenumber of CCEs and coding rates provided by the CCEs, the format of thePDCCH and the possible number of PDCCHs are determined.

The control information transmitted through the PDCCH is denoteddownlink control information (DCI). The DCI may include resourceallocation of PDSCH (this is also referred to as DL (downlink) grant),resource allocation of PUSCH (this is also referred to as UL (uplink)grant), a set of transmission power control commands for individual UEsin some UE group, and/or activation of VoIP (Voice over InternetProtocol).

The base station determines a PDCCH format according to the DCI to besent to the terminal and adds a CRC (cyclic redundancy check) to controlinformation. The CRC is masked with a unique identifier (RNTI; radionetwork temporary identifier) depending on the owner or purpose of thePDCCH. In case the PDCCH is for a specific terminal, the terminal'sunique identifier, such as C-RNTI (cell-RNTI), may be masked to the CRC.Or, if the PDCCH is for a paging message, a paging indicator, forexample, P-RNTI (paging-RNTI) may be masked to the CRC. If the PDCCH isfor a system information block (SIB), a system information identifier,SI-RNTI (system information-RNTI), may be masked to the CRC. In order toindicate a random access response that is a response to the terminal'stransmission of a random access preamble, an RA-RNTI (randomaccess-RNTI) may be masked to the CRC.

In 3GPP LTE, blind decoding is used for detecting a PDCCH. The blinddecoding is a scheme of identifying whether a PDCCH is its own controlchannel by demasking a desired identifier to the CRC (cyclic redundancycheck) of a received PDCCH (this is referred to as candidate PDCCH) andchecking a CRC error. The base station determines a PDCCH formataccording to the DCI to be sent to the wireless device, then adds a CRCto the DCI, and masks a unique identifier (this is referred to as RNTI(radio network temporary identifier) to the CRC depending on the owneror purpose of the PDCCH.

The uplink channels include a PUSCH, a PUCCH, an SRS (Sounding ReferenceSignal), and a PRACH (physical random access channel).

FIG. 5 illustrates the architecture of an uplink sub-frame in 3GPP LTE.

Referring to FIG. 5, the uplink sub-frame may be separated into acontrol region and a data region in the frequency domain. The controlregion is assigned a PUCCH (physical uplink control channel) fortransmission of uplink control information. The data region is assigneda PUSCH (physical uplink shared channel) for transmission of data (insome cases, control information may also be transmitted).

The PUCCH for one terminal is assigned in resource block (RB) pair inthe sub-frame. The resource blocks in the resource block pair take updifferent sub-carriers in each of the first and second slots. Thefrequency occupied by the resource blocks in the resource block pairassigned to the PUCCH is varied with respect to a slot boundary. This isreferred to as the RB pair assigned to the PUCCH having beenfrequency-hopped at the slot boundary.

The terminal may obtain a frequency diversity gain by transmittinguplink control information through different sub-carriers over time. mis a location index that indicates a logical frequency domain locationof a resource block pair assigned to the PUCCH in the sub-frame.

The uplink control information transmitted on the PUCCH includes an HARQ(hybrid automatic repeat request), an ACK (acknowledgement)/NACK(non-acknowledgement), a CQI (channel quality indicator) indicating adownlink channel state, and an SR (scheduling request) that is an uplinkradio resource allocation request.

The PUSCH is mapped with a UL-SCH that is a transport channel. Theuplink data transmitted on the PUSCH may be a transport block that is adata block for the UL-SCH transmitted for the TTI. The transport blockmay be user information. Or, the uplink data may be multiplexed data.The multiplexed data may be data obtained by multiplexing the transportblock for the UL-SCH and control information. For example, the controlinformation multiplexed with the data may include a CQI, a PMI(precoding matrix indicator), an HARQ, and an RI (rank indicator). Or,the uplink data may consist only of control information.

Carrier Aggregation: CA

Hereinafter, a carrier aggregation system will be described.

The carrier aggregation (CA) system means aggregating multiple componentcarriers (CCs). By the carrier aggregation, the existing meaning of thecell is changed.

According to the carrier aggregation, the cell may mean a combination ofa downlink component carrier and an uplink component carrier or a singledownlink component carrier.

Further, in the carrier aggregation, the cell may be divided into aprimary cell, secondary cell, and a serving cell. The primary cell meansa cell that operates at a primary frequency and means a cell in whichthe UE performs an initial connection establishment procedure or aconnection reestablishment procedure with the base station or a cellindicated by the primary cell during a handover procedure. The secondarycell means a cell that operates at a secondary frequency and once an RRCconnection is established, the secondary cell is configured and is usedto provide an additional radio resource.

The carrier aggregation system may be divided into a continuous carrieraggregation system in which aggregated carriers are contiguous and anon-contiguous carrier aggregation system in which the aggregatedcarriers are separated from each other. Hereinafter, when the contiguousand non-contiguous carrier systems are just called the carrieraggregation system, it should be construed that the carrier aggregationsystem includes both a case in which the component carriers arecontiguous and a case in which the component carriers arenon-contiguous. The number of component carriers aggregated between thedownlink and the uplink may be differently set. A case in which thenumber of downlink CCs and the number of uplink CCs are the same as eachother is referred to as symmetric aggregation and a case in which thenumber of downlink CCs and the number of uplink CCs are different fromeach other is referred to as asymmetric aggregation.

Meanwhile, the carrier aggregation (CA) technologies, as describedabove, may be generally separated into an inter-band CA technology andan intra-band CA technology. The inter-band CA is a method thataggregates and uses CCs that are present in different bands from eachother, and the intra-band CA is a method that aggregates and uses CCs inthe same frequency band. Further, CA technologies are more specificallysplit into intra-band contiguous CA, intra-band non-contiguous CA, andinter-band non-contiguous CA.

FIGS. 6A and 6B are concept views illustrating intra-band carrieraggregation (CA).

FIG. 6A illustrates intra-band contiguous CA, and FIG. 6B illustratesintra-band non-contiguous CA.

LTE-advanced adds various schemes including uplink MIMO and carrieraggregation in order to realize high-speed wireless transmission. The CAthat is being discussed in LTE-advanced may be split into the intra-bandcontiguous CA illustrated in FIG. 6A and the intra-band non-contiguousCA illustrated in FIG. 6B.

FIGS. 7A and 7B are concept views illustrating inter-band carrieraggregation.

FIG. 7A illustrates a combination of a lower band and a higher band forinter-band CA, and FIG. 7B illustrates a combination of similarfrequency bands for inter-band CA.

In other words, the inter-band carrier aggregation may be separated intointer-band CA between carriers of a low band and a high band havingdifferent RF characteristics of inter-band CA as illustrated in FIG. 7Aand inter-band CA of similar frequencies that may use a common RFterminal per component carrier due to similar RF (radio frequency)characteristics as illustrated in FIG. 7B.

TABLE 1 Operating Uplink (UL) operating band Downlink (DL) operatingband Duplex Band F_(UL)_low-F_(UL)_high F_(DL)_low-F_(DL)_high Mode 11920 MHz-1980 MHz 2110 MHz-2170 MHz FDD 2 1850 MHz-1910 MHz 1930MHz-1990 MHz FDD 3 1710 MHz-1785 MHz 1805 MHz-1880 MHz FDD 4 1710MHz-1755 MHz 2110 MHz-2155 MHz FDD 5 824 MHz-849 MHz 869 MHz-894 MHz FDD6 830 MHz-840 MHz 875 MHz-885 MHz FDD 7 2500 MHz-2570 MHz 2620 MHz-2690MHz FDD 8 880 MHz-915 MHz 925 MHz-960 MHz FDD 9 1749.9 MHz-1784.9 MHz1844.9 MHz-1879.9 MHz FDD 10 1710 MHz-1770 MHz 2110 MHz-2170 MHz FDD 111427.9 MHz-1447.9 MHz 1475.9 MHz-1495.9 MHz FDD 12 699 MHz-716 MHz 729MHz-746 MHz FDD 13 777 MHz-787 MHz 746 MHz-756 MHz FDD 14 788 MHz-798MHz 758 MHz-768 MHz FDD 15 Reserved Reserved FDD 16 Reserved ReservedFDD 17 704 MHz-716 MHz 734 MHz-746 MHz FDD 18 815 MHz-830 MHz 860MHz-875 MHz FDD 19 830 MHz-845 MHz 875 MHz-890 MHz FDD 20 832 MHz-862MHz 791 MHz-821 MHz FDD 21 1447.9 MHz-1462.9 MHz 1495.9 MHz-1510.9 MHzFDD 22 3410 MHz-3490 MHz 3510 MHz-3590 MHz FDD 23 2000 MHz-2020 MHz 2180MHz-2200 MHz FDD 24 1626.5 MHz-1660.5 MHz 1525 MHz-1559 MHz FDD 25 1850MHz-1915 MHz 1930 MHz-1995 MHz FDD 26 814 MHz-849 MHz 859 MHz-894 MHzFDD 27 807 MHz-824 MHz 852 MHz-869 MHz FDD 28 703 MHz-748 MHz 758MHz-803 MHz FDD 29 N/A N/A 717 MHz-728 MHz FDD 30 2305 MHz-2315 MHz 2350MHz-2360 MHz FDD 31 452.5 MHz-457.5 MHz 462.5 MHz-467.5 MHz FDD 32 N/AN/A 1452 MHz-1496 MHz FDD . . . 33 1900 MHz-1920 MHz 1900 MHz-1920 MHzTDD 34 2010 MHz-2025 MHz 2010 MHz-2025 MHz TDD 35 1850 MHz-1910 MHz 1850MHz-1910 MHz TDD 36 1930 MHz-1990 MHz 1930 MHz-1990 MHz TDD 37 1910MHz-1930 MHz 1910 MHz-1930 MHz TDD 38 2570 MHz-2620 MHz 2570 MHz-2620MHz TDD 39 1880 MHz-1920 MHz 1880 MHz-1920 MHz TDD 40 2300 MHz-2400 MHz2300 MHz-2400 MHz TDD 41 2496 MHz-2690 MHz 2496 MHz-2690 MHz TDD 42 3400MHz-3600 MHz 3400 MHz-3600 MHz TDD 43 3600 MHz-3800 MHz 3600 MHz-3800MHz TDD 44 703 MHz-803 MHz 703 MHz-803 MHz TDD

TABLE 2 Operating Uplink (UL) operating band Downlink (DL) operatingband Duplex Band F_(UL)_low-F_(UL)_high F_(DL)_low-F_(DL)_high Mode n1 1920 MHz-1980 MHz 2110 MHz-2170 MHz FDD n2  1850 MHz-1910 MHz 1930MHz-1990 MHz FDD n3  1710 MHz-1785 MHz 1805 MHz-1880 MHz FDD n5  824MHz-849 MHz 869 MHz-894 MHz FDD n7  2500 MHz-2570 MHz 2620 MHz-2690 MHzFDD n8  880 MHz-915 MHz 925 MHz-960 MHz FDD n20 832 MHz-862 MHz 791MHz-821 MHz FDD n28 703 MHz-748 MHz 758 MHz-803 MHz FDD n38 2570MHz-2620 MHz 2570 MHz-2620 MHz TDD n41 2496 MHz-2690 MHz 2496 MHz-2690MHz TDD n50 1432 MHz-1517 MHz 1432 MHz -1517 MHz  TDD n51 1427 MHz-1432MHz 1427 MHz -1432 MHz  TDD n66 1710 MHz-1780 MHz 2110 MHz -2200 MHz FDD n70 1695 MHz-1710 MHz 1995 MHz-2020 MHz FDD n71 663 MHz-698 MHz 617MHz-652 MHz FDD n74 1427 MHz-1470 MHz 1475 MHz-1518 MHz FDD n75 N/A 1432MHz-1517 MHz SDL n76 N/A 1427 MHz-1432 MHz SDL n77 3300 MHz-4200 MHz3300 MHz-4200 MHz TDD n78 3300 MHz-3800 MHz 3300 MHz-3800 MHz TDD n794400 MHz-5000 MHz 4400 MHz-5000 MHz TDD n80 1710 MHz-1785 MHz N/A SULn81 880 MHz-915 MHz N/A SUL n82 832 MHz-862 MHz N/A SUL n83 703 MHz-748MHz N/A SUL n84 1920 MHz-1980 MHz N/A SUL

When operating bands are fixed as illustrated in Table 1 and Table 2, afrequency allocation organization of each country may assign a specificfrequency to a service provider according to a situation of eachcountry.

Meanwhile, in the current 5G NR technology, a scheme (EN-DC) of duallyconnecting LTE and NR is underway to ensure communication stability.However, in a state in which a downlink carrier using LTE and a downlinkcarrier using NR are aggregated, transmission of an uplink signal maycause a harmonic component and an intermodulation distortion (IMD)component to impact on a downlink band of the UE itself.

Specifically, the UE must be set to satisfy a reference sensitivitypower level (REFSENS), which is minimum average power for each antennaport of the UE.

However, in case that the harmonic component and/or the IMD componentoccurs, the REFSENS for the downlink signal may not be satisfied. Thatis, the REFSENS must be set such that throughput thereof is at least 95%of maximum throughput of a reference measurement channel, but theoccurrence of the harmonic component and/or the IMD component may causethe throughput to fall below 95%.

Thus, it is determined whether the harmonic component and/or the IMDcomponent of the EN-DC terminal (or EN-DC user equipment (UE)) hasoccurred, and when the harmonic component and the IMD component of theEN-DC terminal has occurred, a maximum sensitivity degradation (MSD)value for a corresponding frequency band may be defined to allowrelaxation for the REFSENS in a reception band of the EN-DC terminalbased on a transmission signal of the EN-DC terminal. Here, the MSD ismaximum allowable degradation of REFSENS, and in a certain frequencyband, the REFSENS may be relaxed by the defined amount of MSD.

Accordingly, in the present disclosure, an MSD value for eliminating (orreducing) the harmonic component and IMD is proposed for a terminal setto aggregate two or more downlink carriers and two uplink carriers.

Disclosure of Present Specification

Hereinafter, in case that the UE transmits an uplink signal through twouplink carriers in an aggregation state of a plurality of downlinkcarriers and two uplink carriers, whether an interference is leaked to adownlink band of the UE is analyzed and a solution thereto issubsequently proposed.

FIG. 8 illustrates a situation where an uplink signal transmittedthrough an uplink band flows into an uplink band of the UE.

Referring to FIG. 8, in a state in which three downlink bands are set bycarrier aggregation and two uplink bands are set, when the UE transmitsan uplink signal through two uplink bands, the harmonic component andthe IMD component may be introduced into a downlink band of the UE. Inthis situation, an MSD value capable of correcting the REFSENS isproposed to prevent reception sensitivity of a downlink signal fromdeteriorating due to the harmonic component and/or the IMD component. Inaddition, although the UE appropriately solves the problem, adegradation of a reception sensitivity level in the downlink band of theUE may not be completely prevented due to cross isolation and couplingloss due to the PCB, a scheme of alleviating the requirements that anexisting UE must meet.

I . First Disclosure

FIG. 9 shows a scenario in which a 5G NR band and an LTE E-UTRA band of6 GHz or lower may coexist in a 5G NR non-standalone UE.

Referring to FIG. 9, a shared antenna RF architecture in which the NRNSA UE supports dual connection between an NR band of 6 GHz or lower andan LTE E-UTRA band may be considered. Table 3 shows E-UTRA bands whichmay be aggregated with NR bands in the NR NSA UE.

TABLE 3 LTE band 1 2 3 5 7 8 19 20 21 25 26 28 39 41 66 NR Freq. 3.3-4.2GHz Y Y Y Y Y Y Y Y Y Y Y Y Range 4.4-4.99 GHz Y Y Y Y Y Y Y Y Y Y24.25-29.5 GHz Y Y Y Y Y Y Y Y Y Y Y Y Y 31.8-33.4 GHz Y Y Y Y 37-40 GHZY Band 7 Y Y Y Band 28 Y Y Y Band 41 Y Y Y Y Y Y Y

Referring to FIG. 9 and Table 3, LTE E-UTRA operating bands 1 and 41 maybe aggregated with an NR operating band n77 (3.3 GHz-4.2 GHz).

As illustrated in FIG. 9, a scenario in which LTE E-UTRA operating bands1 and 41 coexist with an NR operating band n77 may include a case 1)where an LTE frequency band and an NR frequency band aresingle-connected (single connectivity), a case 2) where the LTEfrequency band and the NR frequency band are dual-connected (dualconnectivity), and a case 3) where the LTE frequency band and the NRfrequency band are dual-connected in the same frequency band

1) Case where LTE frequency band and NR frequency band aresingle-connected

When LTE and NR are single-connected, LTE may operate as a primary cell.Here, as illustrated in FIG. 9, the LTE operating frequency band B1 maytransmit a signal and an Rx of the LTE operating frequency band B1operates as frequency division duplex (FDD), and thus, signaltransmission and reception may be simultaneously performed. NR operatesas a secondary cell, and in the NR operating frequency band n77, asignal may be received simultaneously with transmission and reception inthe LTE operating frequency band B1.

2) Case where LTE frequency band and the NR frequency band aredual-connected (EN-DC)

When the LTE frequency band and the NR frequency band aredual-connected, impact on a reception band of the UE may be differentdepending on whether the LTE frequency band operates as FDD or timedivision duplexing (TDD).

For example, when the LTE operating frequency band B1 and the NRoperating frequency band n77 are dual-connected, data reception may beperformed only in the LTE operating frequency band B1. Since the NRoperating frequency band n77 operates as TDD, no signal receptionoccurs. Therefore, in this case, the harmonic/IMD impact may be analyzedonly for a reception band of the LTE operating frequency band B1 inwhich signal reception may occur.

Meanwhile, unlike the case of FIG. 9, when the LTE operating frequencyband B1 and the NR operating frequency band n7 are dual-connected, sinceboth the LTE operating frequency band B1 and the NR operating frequencyband n7 operate as FDD, harmonic/IMD impact must be analyzed in both theLTE operating frequency band B1 and the NR operating frequency band n7.

Also, when the LTE operating frequency band B41 and the NR operatingfrequency band n77 are dual-connected, both the LTE operating frequencyband B41 and the NR operating frequency band n77 operate as TDD, andthus, signals are not simultaneously transmitted and received at thesame ban so there is no need to analyze the harmonic/IMD impact.However, when both bands operate asynchronously, self-interference mayneed to be analyzed.

3) Case where LTE frequency band and NR frequency band aredual-connected at the same frequency band

For example, the LTE operating frequency band B41 and the NR operatingfrequency band n41 may be dual-connected or the LTE operating frequencyband B71 and the NR operating frequency band n71 may be dual-connected.In this case, MPR/A-MPR must be analyzed according to RF architecture.

As illustrated in FIG. 9, when the LTE operating frequency band B41 andthe NR operating frequency band n41 are dual-connected, the frequencybands B41 and n41 operate as TDD, and thus, the harmonic/IMD problem forthe reception band of the UE does not arise .

However, if the LTE operating frequency band B71 and the NR operatingfrequency band n71 are dual-connected, since the frequency bands B71 andn71 operate as FDD, intra-band contiguous CA occurs in the band, andthus, the harmonic/IMD problem of the reception band of the UE regardingthe frequency bands B71 and n71 must be analyzed.

Also, Table 4 shows the harmonic and IMD problem when the NR NSAterminal supports single/dual-connection between the NR operating bandn77 and the LTE E-UTRA operating bands, and Table 5 shows the harmonicand IMD problem when the NR NSA terminal supports single/dual-connectionbetween the NR operating band n79 and the LTE E-UTRA operating bands.Referring to Table 4 and Table 5, it can be seen that the harmonicproblem is a major factor in the reduction of sensitivity. In addition,in the case of dual connectivity (DC), the reception frequency band ofthe UE may be impacted by the IMD. Therefore, a maximum sensitivitydegradation (MSD) must be considered not only for the harmonic problembut also for the IMD problem, and a scheme of guaranteeing a zero MSD inthe existing E-UTRA band by optimizing resource block (RB) assignment inthe NR band or by controlling the RB size or position by gNB schedulingmust be considered.

TABLE 4 NR band (MHz) E-UTRA band 3300-4200 E-UTRA UL range HarmonicHarmonic band (MHz) order range (MHz) Harmonic/IMD problem B1 1920-19802x 3840-3960 1) Harmonics into NR 2) 2^(nd), 4^(th) & 5^(th) IMD into B13) 4^(th) & 5^(th) IMD into NR B3 1710-1785 2x 3420-3570 1) Harmonicsinto NR 2) 2^(nd), 4^(th) & 5^(th) IMD into B3 3) 4^(th) & 5^(th) IMDinto NR B5 824-849 4x 3296-3396 1) Harmonics into NR 5x 4120-4245 2)4^(th) &5^(th) IMD into B5 3) 2^(nd) & 5^(th) IMD into NR B7 2500-2570 —N/A 1) No harmonics 2) 4^(th) IMD into B7 3) 3^(rd) & 4^(th) IMD into NRB8 880-915 4x 3520-3660 1) Harmonics into NR 2) 4^(th) IMD into B8 3)2^(nd) & 5^(th) IMD into NR B19 830-845 4x 3320-3380 1) Harmonics intoNR 5x 4150-4225 2) B19 

  4^(th)&5^(th) IMD 3) NR 

  2^(nd) & 5^(th) IMD B20 832-862 4x 3328-3448 1) Harmonics into NR 5x4160-4310 2) 4^(th) & 5^(th) IMD into B19 3) 2^(nd) & 5^(th) IMD into NRB21 1447.9-1462.9 — N/A 1) No harmonics 2) No impact of IMD on B21 3)4^(th) & 5^(th) IMD into NR B25 1850-1915 2x 3700-3830 1) Harmonics intoNR 2) 2^(nd), 4^(th) & 5^(th) IMD into B25 3) 4^(th) & 5^(th) IMD intoNR B26 814-849 4x 3256-3396 1) Harmonics into NR 5x 4070-4245 2)4^(th)&5^(th) IMD into B26 3) 2^(nd) & 5^(th) IMD into NR B28 703-748 5x3515-3740 1) Harmonics into NR 2) 5^(th) IMD into B28 3) 2^(nd) IMD intoNR B38 2570-2620 — N/A 1) No harmonics 2) 4^(th) IMD into B7 3) 3^(rd) &4^(th) IMD into NR TDD-TDD sync. → No impact B39 1880-1920 2x3760-3840 1) Harmonics into NR 2) 2^(nd), 4^(th) & 5^(th) IMD into B393) 4^(th) & 5^(th) IMD into NR TDD-TDD sync. → No impact B41 2496-2690 —N/A 1) No harmonics 2) 4^(th) IMD into B41 3) 3^(rd) & 4^(th) IMD intoNR TDD-TDD sync. → No impact B42 3400-3600 — N/A 1) No harmonics 2)3^(rd), 5^(th) IMD into B42 3) 3^(rd), 5^(th) IMD into NR TDD-TDD sync.→ No impact

TABLE 5 NR band (MHz) E-UTRA band 4400-5000 E-UTRA UL range harmonicharmonic band (MHz) order range (MHz) harmonic/IMD problem B1 1920-1980— N/A 1) No harmonics into NR 2) No impact on B1 3) Impact of 4^(th) IMDon NR B3 1710-1785 — N/A 1) No harmonics into NR 2) 5^(th) IMD into B33) 5^(th) IMD into NR B8 880-915 5x 4400-4575 1) Harmonic into NR 2)5^(th) IMD into B8 3) No harmonics into NR B19 830-845 6x 4980-5070 1)Harmonics into NR 2) No IMD problem at B19 3) No IMD problem at NR B211447.9-1462.9 — N/A 1) No harmonics 2) 3^(rd) IMD into B21 3) 5^(th) IMDinto NR B26 814-849 6x 4884-5094 1) Harmonic into NR 2) No IMD problemat B26 3) No IMD problem at NR B28 703-748 6x 4218-4488 1) Harmonicsinto NR 7x 4921-5236 2) No IMD problem at B28 3) No IMD problem at NRB39 1880-1920 — N/A 1) No harmonics into NR 2) No IMD problem at B39 3)4^(th) IMD into NR → TDD- TDD sync. → No impact B41 2496-2690 2x4992-5380 1) Harmonic into NR 2) 2^(nd), 4^(th) & 5^(th) IMD into B41 3)4^(th) & 5^(th) IMD into NR TDD-TDD sync. → No impact B42 3400-3600 —N/A 1) No harmonics into NR 2) No IMD problem at B42 3) No IMD problemNR

According to Tables 4 and 5, it can be seen that the harmonic/IMDproblem does not occur when considering the synchronized TDD-TDD networkbetween the existing TDD LTE band and NR band.

Thus, the following phenomenon may be discovered on the basis of Table 4and Table 5.

-   -   Observation 1: In a TDD-TDD synchronization network, the        harmonic/IMD problems does not occur    -   Observation 2: In an FDD-TDD NSA terminal, the harmonic problem        may have a fatal impact on NR reception frequency of the        terminal.

The harmonic problem may impact on the NR band regarding FDD-TDD DC NSAterminals. Thus, a harmonic trap filter must be considered for aspecific NSA terminal. The harmonic trap filter may significantly reducean interference level regarding the NR band. Also, an MSD levelregarding the NR band of the NSA terminal may be defined regardless ofharmonic order.

A third point is the IMD problem regarding a NSA DC terminal. This maybe divided into two problems.

A first problem is that the IMD may impact on a reception LTE (E-UTRA)band of the terminal.

-   -   Observation 3: Regarding the FDD-TDD NSA terminal, the IMD may        impact on an LTE reception frequency of the terminal

Since mobility control of the NSA terminal is based on LTE connection,desensitization of the LTE band must be prevented throughdual-transmission that guarantees an MSD level of 0 dB in the existingLTE band. Thus, additional maximum power reduction (A-MPR) requirementsin the NR band must be defined to protect the existing LTE band or allowresource block (RB) shift or a limited RB size in the NR band.

Also, the second problem may impact on a reception NR band of theterminal.

-   -   Observation 4: In the FDD-TDD NSA terminal, the IMD may fall on        the NR reception frequency of the terminal.

Here, if a required MSD level is not higher than a specific level, theMSD level for the NR band may be defined. Then, dual-connectivity (DC)for a combination of LTE band and NR band may be allowed. However, ifthe required MSD level is higher than the specific level, the NSA DC ofthe combination of the LTE band and the NR band may not be allowed

In an LTE dual-uplink carrier aggregation (CA) band combination, anaverage

MSD level regarding an IMD4 (4^(th) IMD) generated from 11 sample bandcombinations of the Table 7.3.1A-Of of TS 36.101 in which MSD levelsaccording to dual-uplink CA band combinations is 7.56 dB. Also, anaverage MSD level regarding IMD5 (5^(th) IMD) is 4.68. dB. However, astatistical MSD level regarding IMD3 (3^(rd) IMD) is 13.73 dB.

-   -   Observation 5: In the dual uplink LTE CA, an MSD level according        to IMD4 and

IMD5 may be approximately 10 dB or less.

Based on the MSD results of the 2DL/2UL CA band combination of TS36.101, a reference MSD level may be determined as 10 dB. This may meanthat if the MSD level is greater than 10 dB, NSA DC in the combinationof the candidate LTE band and the NR band is not allowed. If not, an NSADC operation in the combination of the LTE band and the NR NSA band isallowed and an MSD level may be defined as a REFSENS exceptionalcondition.

According to the above observations, in the present disclosure, a 5G NSAterminal of 6 GHz or lower is proposed as follows.

-   -   Proposal 1: For the harmonic problem, a harmonic trap filter may        be considered to reduce an interference signal level and the MSD        level may be defined.    -   Proposal 2: When the IMD falls on the existing LTE band, a 0 dB        MSD must be guaranteed using the A-MPR scheme or next generation        NodeB (gNB) scheduling in the NR band.    -   Proposal 3: When the IMD falls on the NR band, an MSD level may        be defined as exceptional requirements for reference sensitivity        (REFSENS).

1 Proposal 4: Based on observation 4 and observation 5 above, the MSDlevel may be determined to be 10 dB as a reference point regardingwhether NSA dual-connection operation is allowed.

II. Second Disclosure

To support dual-connection between the NR band and the LTE E-UTRA band,it is necessary to evaluate a coexistence analysis for an NSA operationwithin some NR deployment scenarios. Thus, in the second disclosure, anMSD value for supporting a DC operation although self-interferenceimpacts on a reception frequency band of the terminal is proposed.

Regarding NR, a shared antenna RF architecture for NSA terminals of 6GHz or lower may be considered as an LTE system. Thus, a shared antennaRF architecture for a general NSA DC terminal may be considered toderive the MSD level. However, some DC band combinations for the NR DCterminal must consider a separate RF architecture which means thatoperating frequency ranges between the NR band and the LTE band overlaplike DC_42A-n77A, DC_42A-n78A, and DC_41_n41A.

1. Harmonic Problem in NR Band

Based on a coexistence analysis result for the NSA DC terminal, the MSDlevel for the following five cases may be determined. When the MSD levelis analyzed, a harmonic trap filter may be used.

-   -   2^(nd) harmonic: DC_1A-n77A    -   4^(th) harmonic: DC_5A-n78A, DC_8A-n78A, DC_20A-n78A    -   5^(th) harmonic: DC_5A-n77A, DC_8A-n79A, DC_19A-n77A,        DC_20A-n77A    -   6^(th) harmonic: DC_19A-n79A, DC_28A-n79A    -   7^(th) harmonic: DC_28A-n79A

MSD Level Regarding 2^(nd) Harmonic

Table 6 below shows RF component isolation parameters of the DC_1A-n77Aterminal for deriving the MSD level at 6 GHz or lower.

TABLE 6 Option1: W/HTF Option2: W/O HTF Primary Diversity PrimaryDiversity H2 H2 H2 H2 Parameter Value level Value level Value levelValue level B1 Tx in PA output 28 28 28 28 B1 PA H2 35 −7 35 −7 35 −7 35−7 attenuation B1 duplexer H2 30 −37 30 −37 30 −37 30 −37 attenuationHarmonic filter 25 −62 25 −62 0 −37 0 −37 Mid switch H2 −65 −60.2 −65−60.2 −65 −37 −65 −37 Diplexer attenuation 25 −85.2 25 −85.2 25 −62 25−62 Antenna isolation 0 −85.2 10 −95.2 0 −62 10 −72 HB switch 0.7 −85.90.7 −95.9 0.7 −62.7 0.7 −72.7 attenuation HB switch H2 −130 −85.9 −110−95.8 −130 −62.7 −110 −72.7 n77 Rx filter atten. 1.5 −87.4 1.5 −97.3 1.5−64.2 1.5 −74.2 n77 Rx filter H2 −110 −87.4 −110 −97.0 −110 −64.2 −110−74.2 B1 PA to NR B77 60 −67.0 60 −67.0 60 −67.0 60 −67.0 LNA isolationComposite −67.0 −67.0 −62.4 −66.2

The major factor for determining the MSD level for the second harmonicis an isolation level from the LTE band B1 power amplifier (PA) to theNR band n77 low-noise amplifier (LNA). It may be limited to 3.3 GHz to4.2 GHz by the B1 PA attenuation level.

According to Table 6, the MSD level for DC_1A-n77A may be expressed asillustrated in Table 7 below.

TABLE 7 W/HTF W/O HTF H2 level MSD H2 level MSD Thermal (dBm) (dB) (dBm)(dB) Main Path −101 −67.0 34.8 −62.4 39.4 Diversity Path −101 −67.0 34.8−66.2 35.5 After MRC 31.8 34.0

MSD Level for 4^(th) Harmonic

Table 8 shows RF component isolation parameters of the DC_5A-n78Aterminal for deriving the MSD level at 6 GHz or lower.

TABLE 8 Option1: W/HTF Option2: W/O HTF Primary Diversity PrimaryDiversity H4 H4 H4 H4 Parameter Value level Value level Value levelValue level B5 Tx in PA output 28 28 28 28 B5 PA H4 48 −20 48 −20 48 −2048 −20 attenuation B5 duplexer H4 30 −50 30 −50 30 −50 30 −50attenuation Harmonic filter 25 −75 25 −75 0 −50 0 −50 Low switch H4 −65−64.6 −65 −64.6 −65 −49.9 −65 −49.9 Diplexer attenuation 27 −91.6 27−91.6 27 −76.9 27 −76.9 Antenna isolation 0 −91.6 10 −101.6 0 −76.9 10−86.9 HB switch 0.7 −92.3 0.7 −102.3 0.7 −77.6 0.7 −87.6 attenuation HBswitch H4 −130 −92.3 −110 −101.6 −130 −77.6 −110 −87.5 n78 Rx filteratten. 1.5 −93.8 1.5 −103.1 1.5 −79.1 1.5 −89.0 n78 Rx filter H4 −110−93.7 −110 −102.3 −110 −79.1 −110 −89.0 B5 PA to NR B78 60 −80.0 60−80.0 60 −80.0 60 −80.0 LNA isolation Composite −79.8 −80.0 −76.5 −79.5

According to Table 8, the MSD level for DC_5A-n78A may be expressed asillustrated in Table 9 below.

TABLE 9 W/HTF W/O HTF H4 level MSD H4 level MSD Thermal (dBm) (dB) (dBm)(dB) Main Path −101 −79.8 22.0 −76.5 25.3 Diversity Path −101 −80.0 21.8−79.4 22.3 After MRC 18.9 20.6

MSD Level for 5^(th) Harmonic

Table 10 shows RF component isolation parameters for the DC_19A-n77Aterminal to derive the MSD level at 6 GHz or lower.

TABLE 10 Option1: W/HTF Option2: W/O HTF Primary Diversity PrimaryDiversity H5 H5 H5 H5 Parameter Value level Value level Value levelValue level B19 Tx in PA output 28 28 28 28 B19 PA H5 53 −25 53 −25 53−25 53 −25 attenuation B19 duplexer H5 30 −55 30 −55 30 −55 30 −55attenuation Harmonic filter 25 −80 25 −80 0 −55 0 −55 Low switch H5 −65−64.9 −65 −64.9 −65 −54.6 −65 −54.6 Diplexer attenuation 27 −91.9 27−91.9 27 −81.6 27 −81.6 Antenna isolation 0 −91.9 10 −101.9 0 −81.6 10−91.6 HB switch 0.7 −92.6 0.7 −102.6 0.7 −82.3 0.7 −92.3 attenuation HBswitch H5 −130 −92.6 −110 −101.8 −130 −82.3 −110 −92.2 n77 Rx filteratten. 1.5 −94.1 1.5 −103.3 1.5 −83.8 1.5 −93.7 n77 Rx filter H5 −110−94.0 −110 −102.5 −110 −83.8 −110 −93.6 B19 PA to NR B77 60 −85.0 60−85.0 60 −85.0 60 −85.0 LNA isolation Composite −84.5 −84.9 −81.3 −84.4

According to Table 10, the MSD level for DC_19A-n77A may be expressed asin Table 11 below.

TABLE 11 W/HTF W/O HTF H5 level MSD H5 level MSD Thermal (dBm) (dB )(dBm) (dB) Main Path −101 −84.5 17.4 −81.3 20.5 Diversity Path −101−84.9 16.9 −84.4 17.4 After MRC 14.1 15.7

MSD Level for 6^(th) Harmonic

Table 12 shows RF component isolation parameters of the DC_19A-n79Aterminal to derive the MSD level at 6 GHz or lower.

TABLE 12 Option1: W/HTF Option2: W/O HTF Primary Diversity PrimaryDiversity H6 H6 H6 H6 Parameter Value level Value level Value levelValue level B19 Tx in PA output 28 28 28 28 B19 PA H6 60 −32 60 −32 60−32 60 −32 attenuation B19 duplexer H6 30 −62 30 −62 30 −62 30 −62attenuation Harmonic filter 25 −87 25 −87 0 −62 0 −62 Low switch H6 −70−69.9 −70 −69.9 −70 −61.4 −70 −61.4 Diplexer attenuation 27 −96.9 27−96.9 27 −88.4 27 −88.4 Antenna isolation 0 −96.9 10 −106.9 0 −88.4 10−98.4 HB switch 0.7 −97.6 0.7 −107.6 0.7 −89.1 0.7 −99.1 attenuation HBswitch H6 −130 −97.6 −110 −105.6 −130 −89.1 −110 −98.7 n79 Rx filteratten. 1.5 −99.1 1.5 −107.1 1.5 −90.6 1.5 100.2 n79 Rx filter H6 −110−98.8 −110 −105.3 −110 −90.5 −110 −99.8 B19 PA to NR B79 60 −92.0 60−92.0 60 −92.0 60 −92.0 LNA isolation Composite −91.2 −91.8 −88.2 −91.3

According to Table 12, the MSD level for DC_19A-n79A may be expressed asillustrated in Table 13 below.

TABLE 13 W/HTF W/O HTF H6 level MSD H6 level MSD Thermal (dBm) (dB)(dBm) (dB) Main Path −101 −91.2 11.0 −88.2 13.8 Diversity Path −101−91.8 10.4 −91.3 10.8 After MRC 7.7 9.1

MSD Level for 7^(th) Harmonic

Table 14 shows RF component isolation parameters of the DC_28A-n79Aterminal to derive the MSD level at 6 GHz or lower.

TABLE 14 Option1: W/HTF Option2: W/O HTF Primary Diversity PrimaryDiversity H7 H7 H7 H7 Parameter Value level Value level Value levelValue level B28 Tx in PA output 28 28 28 28 B28 PA H7 70 −42 70 −42 70−42 70 −42 attenuation B28 duplexer H7 30 −72 30 −72 30 −72 30 −72attenuation Harmonic filter 25 −97 25 −97 0 −72 0 −72 Low switch H7 −80−79.9 −80 −79.9 −80 −71.4 −80 −71.4 Diplexer attenuation 27 −106.9 27−106.9 27 −98.4 27 −98.4 Antenna isolation 0 −106.9 10 −116.9 0 −98.4 10−108.4 HB switch 0.7 −107.6 0.7 −117.6 0.7 −99.1 0.7 −109.1 attenuationHB switch H7 −130 −107.6 −110 −109.3 −130 −99.1 −110 −106.5 n79 Rxfilter atten. 1.5 −109.1 1.5 −110.8 1.5 −100.6 1.5 −108.0 n79 Rx filterH7 −110 −106.5 −110 −107.4 −110 −100.1 −110 −105.9 B28 PA to NR B79 60−102.0 60 −102.0 60 −102.0 60 −102.0 LNA isolation Composite −100.7−100.9 −97.9 −100.5

According to Table 14, the MSD level for DC_28A-n79A may be expressed asillustrated in Table 15 below.

TABLE 15 W/HTF W/O HTF H6 level MSD H6 level MSD Thermal (dBm) (dB)(dBm) (dB) Main Path −101 −100.7 3.6 −97.9 5.4 Diversity Path −101−100.9 3.5 −100.5 3.7 After MRC 0.53 1.5

Based on the above-described harmony analysis results, the presentdisclosure proposes as follows.

-   -   Proposal 1: For the harmonic problem, an MSD level must be        defined for the NR band of the maximum of sixth harmonic to        support the NSA DC operation. The 7th harmonic does not        seriously impact on NR sensitivity.

2. IMD Problem for LTE Band and NR Refarming Band

The NR refarming band refers to a reused band, which means a frequencyband used for LTE communication and also used for NR communication amongfrequency bands. For example, referring to Table 1 and Table 2 describedabove, the NR operating band n1 to the NR operating band n41 may berefarming bands which are also included in the LTE operating band.

Based on the coexistence analysis results for the NSA DC terminal, theMSD levels for the following four cases may be determined. When the MSDlevel is analyzed, a harmonic trap filter may be used.

-   -   2^(nd) IMD : DC_1A-n77A, DC_3A-n77A, DC_3A-n78A    -   3^(rd) IMD : DC_21A-n79A    -   4^(th) IMD : DC_1A-n77A, DC_1A-n78A, DC_3A-n77A, DC_3A-n78A,        DC_7A-n77A, DC_8A-n77A, DC_19A-n77A, DC_20A-n77A, DC_26A-n77A,        DC_3A-n7A    -   5^(th) IMD : DC_3A-n79A, DC_8A-n79A, DC_19A-n77A, DC_2A-n66A

Table 16 shows UE RF front-end component parameters for deriving an MSDlevel at 6 GHz or lower.

TABLE 16 UE ref. Architecture Cas-caded Diplexer ArchitectureDC_1A-n77A, DC_3A-n77A, DC_3A-n78A, DC_21A-n79A IP2 IP3 IP4 IP5Component (dBm) (dBm) (dBm) (dBm) Ant. Switch 112 68 55 55 Diplexer 11587 55 55 Duplexer 100 75 55 53 PA Forward 28.0 32 30 28 PA Reversed 4030.5 30 30 LNA 10 0 0 −10

Table 17 shows isolation levels according to RF components.

TABLE 17 Value Isolation Parameter (dB) Comment Antenna to Antenna 10Main antenna to diversity antenna PA (out) to PA (in) 60 PCB isolation(PA forward mixing) Diplexer 25 High/low band isolation PA (out) to PA(out) 60 L-H/H-L cross-band PA (out) to PA (out) 50 H-H cross-band LNA(in) to PA (out) 60 L-H/H-L cross-band LNA (in) to PA (out) 50 H-Hcross-band Duplexer 50 Tx band rejection at Rx band

Here, the isolation level indicates how much strength of a signal isreduced at the corresponding frequency when the signal passes through anelement or an antenna. For example, referring to Table 17, when thesignal is transmitted from an antenna to an antenna, strength thereofmay be reduced by 10 dB and when the signal is received at thatfrequency, strength thereof may be reduced by 50 dB.

Based on Table 16 and Table 17, the present disclosure proposes MSDlevels as illustrated in Table 18 to Table 21.

Table 18 shows the MSD levels proposed for the second IMD.

TABLE 18 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_1A- 1 IMD2 |f_(B77) − f_(B1)|1930 5 25 2120 5 2.2 31.1 n77A n77 4050 10 52 4050 10 N/A DC_3A- 3 IMD2|f_(B77) − f_(B3)| 1730 5 25 1825 5 2.5 31.3 n77A n77 3555 10 52 3555 10N/A DC_3A- 3 IMD2 |f_(B78) − f_(B3)| 1730 5 25 1825 5 2.5 31.3 n78A n783555 10 52 3555 10 N/A

Table 19 shows a proposed MSD level for a third IMD.

TABLE 19 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_21A- 21 IMD3 |f_(B79) −2*f_(B21)| 1457.5 5 25 1505.5 5 1.8 18.4 n79A n79 4420.5 40 216 4420.540 N/A

Table 20 shows a proposed MSD level for a fourth IMD.

TABLE 20 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_1A- 1 IMD4 |f_(B77) −3*f_(B1)| 1930 5 25 2120 5 1.5 8.3 n77A n77 3670 10 52 3670 10 N/ADC_1A- 1 IMD4 |f_(B78) − 3*f_(B1)| 1930 5 25 2120 5 1.5 8.3 n78A n783670 10 52 3670 10 N/A DC_3A- 3 IMD4 |f_(B77) − 3*f_(B3)| 1770 5 25 18655 1.5 8.5 n77A n77 3445 10 52 3445 10 N/A DC_3A- 3 IMD4 |f_(B78) −3*f_(B3)| 1770 5 25 1865 5 1.5 8.5 n78A n78 3445 10 52 3445 10 N/ADC_7A- 7 IMD4 |2*f_(B77) − 2*f_(B7)|  2560 10 50 2680 10 1.6 9.3 n77An77 3900 10 52 3900 10 N/A DC_8A- 8 IMD4 |f_(B77) − 3*f_(B3)| 910 5 25955 5 1.3 8.4 n77A n77 3685 10 52 3685 10 N/A DC_19A- 19  IMD4  |f_(B77)− 3*f_(B19)| 840 5 25 885 5 1.7 8.7 n77A n77 3405 10 52 3405 10 N/ADC_20A- 20  IMD4  |f_(B77) − 3*f_(B19)| 857 5 25 816 5 1.7 9.0 n77A n773387 10 52 3387 10 N/A DC_26A- 26  IMD4  |f_(B77) − 3*f_(B26)| 819 5 25864 5 1.7 9.0 n77A n77 3321 10 52 3321 10 N/A DC_3A- 3 IMD4  |f_(B7) −3*f_(B3)| 1740 5 25 1835 5 1.5 N/A n7A n7  2550 10 52 2670 10 7.5

Table 21 shows a proposed MSD level for a fifth IMD.

TABLE 21 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_3A- 3 IMD5 |f_(B79) −4*f_(B3)| 1712.5 5 25 1807.5 5 0.5 0.0 n79A n79 4995 10 52 4995 10 N/ADC_8A- 8 IMD5 |f_(B79) − 4*f_(B8)| 900 5 25 945 5 1.0 2.7 n79A n79 454510 52 4545 10 N/A DC_19A- 19  IMD5  |f_(B77) − 4*f_(B19)| 832.5 5 25877.5 5 0.5 0.0 n77A n77 4195 10 52 4195 10 N/A DC_2A- 2 IMD5 |2*f_(B66)− 3*f_(B2)|  1860 5 25 1940 5 0.8 N/A n66A n66 1725.5 5 52 2130 5 2.0

Based on the MSD levels for the IMDs, the present disclosure proposes asfollows.

-   -   Proposal 2: For the IMD problem, an MSD level must be defined        for the NR band of a maximum of the fifth order IMD to support        NSA DC operation. In addition, corresponding test setup and MSD        level may be considered to designate the NSA terminal DC        sensitivity level.

III. Third Disclosure

In the third disclosure, self-interference that occurs when a 5G NRterminal performing a DC operation (EN-DC) of the LTE band and the NRband transmits a dual-uplink signal is analyzed and a relaxed standardfor sensitivity is proposed.

Table 22 shows self-interference that may occur in the LTE-NR DCcombination of 3DL/2UL.

TABLE 22 Interference due to small Downlink Uplink frequency band setupDC setup harmonic IMD isolation MSD B1 + DC_1A_n3A 2^(nd) 2^(nd) &4^(th) Yes Harmonic problems will n3 + harmonic IMDs be covered inDC_n3A- n78 from n3 into n78 n78A. into n78 2^(nd) &4^(th) IMDs problemswill be FFS. Small freq. gap was covered in Table 7.3.1A- 0bA inTS36.101 DC_1A_n78A — 2^(nd) — 2^(nd) IMD problems will IMD into be FFS.n3 B1 + DC_1A_n78A — 3^(rd) — 3^(rd) IMD problem will be n78 + IMD intoFFS. If consider n79 n79 synchronous TDD operation btw n78 and n79, MSDstudy is not necessary. DC_1A_n79A — 5^(th) — 5^(th) IMD problem will beIMDs into FFS. If consider n78 synchronous TDD operation btw n78 andn79, MSD study is not necessary. B1 + DC_1A_n77A 7^(th) & 8^(th) — — Noharmonics problems n77 + Harmonics from by 7^(th) & 8^(th) order betweenn257 n77 into n257 FR1 and FR2 DC_1A_n257A 2^(nd) — — Harmonic problemharmonic from already discussed and will B1 into n77 be solved inDC_1A_n77A B1 + DC_1A_n78A 7^(th)& 8^(th) — — No harmonics problemsn78 + Harmonics from by 7^(th) & 8^(th) order between n257 n78 into n257FR1 and FR2 DC_1A_n257A 2^(nd) — — Harmonic problem harmonic fromalready discussed and will B1 into n78 be solved in DC_1 A_n78A B1 +DC_1A_n79A 6^(th) — — Harmonic problem will be n79 + Harmonics fromsolved in DC_n79A-n257A n257 n79 into n257 (6^(th) order) DC_1A_n257A —— — No issues B3 + DC_3A_n1A 2^(nd) 2^(nd) & 4^(th) Yes Harmonicproblems will n1 + harmonic from IMDs into be covered in n78 3 into n78n78 DC_3A_n78A. 2^(nd) &4^(th) IMDs problems same as DC_1A_n3A- n78A.Small freq. gap was covered in Table 7.3.1A- 0bA in TS36.101 DC_3A_n78A— 5^(th) — 5^(th) IMD problems will be IMD into FFS. n1 B3 + DC_3A_n77A— 3^(rd) & 4^(th) — RAN4 agreed the n77 + IMDs into synchronous TDD n79n79 operation btw n77 and n79, So MSD study are not necessary.DC_3A_n79A 2^(nd) 5^(th) — Harmonic problem will be harmonic from IMDinto solved in DC_3A_n77A B3 into B77 B77 RAN4 agreed the synchronousTDD operation btw n77 and n79, So MSD study is not necessary. B3 +DC_3A_n78A — 3^(rd) — 3^(rd) IMD problem will be n78 + IMD into FFS. Ifconsider n79 n79 synchronous TDD operation btw n78 and n79, MSD study isnot necessary. DC_3A_n79A 2^(nd) 5^(th) — Harmonic problem will beharmonic from IMD into solved in DC_3A_n78A B3 into B78 B78 5^(th) IMDproblem will be FFS. If consider synchronous TDD operation btw n78 andn79, MSD study is not necessary. B3 + DC_3A_n77A 7^(th) & 8^(th) — — Noharmonics problems n77 + harmonics from by 7^(th) & 8^(th) order betweenn257 n77 into n257 FR1 and FR2 DC_3A_n257A 2^(nd) — — Harmonic problemwill be harmonic from solved in DC_3A_n77A B3 into B77 B3 + DC_3A_n78A7^(th) & 8^(th) — — No harmonics problems n78 + harmonics from by 7^(th)& 8^(th) order between n257 n78 into n257 FR1 and FR2 DC_3A_n257A 2^(nd)— — Harmonic problem will be harmonic from solved in DC_3A_n78A B3 inton78 B3 + DC_3A_n79A 6^(th) — — Harmonic problem will be n79 + harmonicfrom solved in DC_n79A-n257A n257 n79 into n257 (6^(th) order)DC_3A_n257A — — — No issues B5 + DC_5A_n78A 7^(th) & 8^(th) — — Noharmonics problems n78 + harmonics from by 7^(th) & 8^(th) order betweenn257 n78 into n257 FR1 and FR2 DC_5A_n257A 4^(th) harmonic from — —Harmonic problem will be B5 into n78 solved in DC_5A_n78A B7 +DC_7A_n78A 7^(th) & 8^(th) — — No harmonics problems n78 + harmonicsfrom by 7^(th) & 8^(th) order between n257 n78 into n257 FR1 and FR2DC_7A_n 257A — — — No issues B7 + DC_7A_n1A — — — No issues n1 +DC_7A_n3A — — — No issues n3 B7 + DC_7A_n1A — 4^(th) & 5^(th) — 4^(th) &5^(th) IMDs problem will n1 + IMDs into be FFS. n78 n78 DC_7A_n78A —4^(th) — 4^(th) IMD problem will be IMD into FFS. n1 B7 + DC_7A_n3A2^(nd) 3^(rd) — Harmonic problem will be n3 + harmonic from IMD intosolved in DC_n3A-n78A n78 n3 into n78 n78 3^(rd) IMD problem will beFFS. DC_7A_n78A — 3^(rd) & 4^(th) — 3^(rd) & 4^(th) IMDs problem will beIMDs into FFS. n3 B19 + DC_19A_n77A 6^(th) 2^(nd), 3^(rd), — Harmonicproblem will n77 + harmonic from 4^(th) & 5^(th) be solved inDC_19A_n79A n79 B19 into n79 IMDs into RAN4 agreed the n79 synchronousTDD operation btw n77 and n79, So MSD study is not necessary.DC_19A_n79A 4^(th) & 5^(th) 2^(nd)&3^(rd) — Harmonic problem will beharmonics from IMDs into solved in DC_19A_n77A B19 into n77 n77 RAN4agreed the synchronous TDD operation btw n77 and n79, So MSD study isnot necessary. B19 + DC_19A_n78A 6^(th) 2^(nd), 3^(rd), — Harmonicproblem will be n78 + harmonic from 4^(th) & 5^(th) solved inDC_19A_n79A n79 B19 into n79 IMDs into These IMDs problem are n79 FFS.If consider synchronous TDD operation btw n78 and n79, MSD study is notnecessary. DC_19A_n79A 4^(th) 2^(nd)&3^(rd) — Harmonic problem will beharmonic from IMDs into solved in DC_19A_n78A B19 into n78 n78 TheseIMDs problem are FFS. If consider synchronous TDD operation btw n78 andn79, MSD study is not necessary. B19 + DC_19A_n77A 7^(th) & 8^(th) — —No harmonics problems n77 + harmonics from by 7^(th) & 8^(th) orderbetween n257 n77 into n257 FR1 and FR2 DC_19A_n257A 4^(th) & 5^(th) — —Harmonic problem will be harmonics from solved in DC_19A_n77A B19 inton77 B19 + DC_19A_n78A 7^(th) & 8^(th) — — No harmonics problems n78 +harmonics from by 7^(th) & 8^(th) order between n257 n78 into n257 FR1and FR2 DC_19A_n257A 4^(th) — — Harmonic problem will be harmonic fromsolved in DC_19A_n78A B19 into n78 B19 + DC_19A_n79A 6^(th) — — Harmonicproblem will be n79 + harmonic from solved in DC_n79A-n257A n257 n79into n257 (6^(th) order) DC_19A_n257A 6^(th) — — Harmonic problem willbe harmonic from solved in DC_19A_n79A B19 into n79 B20 + DC_20A_n1A — —— No issues n1 + DC_20A_n3A — — — No issues n3 B20 + DC_20A_n1A 4^(th)3^(rd) — Harmonic problem will be n1 + harmonic from IMD into solved inDC_20A_n78A n78 B20 into n78 n78 — 3^(rd) IMD issue will be FFSDC_20A_n78A — 3^(rd) — 3^(rd) IMD issue will be FFS IMD into n1 B20 +DC_20A_n3A 2^(nd) 3^(rd) & 5^(th) — 3^(rd) & 5^(th) IMDs problem willn3 + harmonic from n3 IMDs into be FFS. n78 into n78 n78 4^(th) harmonicfrom B20 into n78 DC_20A_n78A — 3^(rd) — 3^(rd) IMD problem will be IMDinto FFS n3 B21 + DC_21A_n77A — 2^(nd) & 4^(th) — RAN4 agreed the n77 +IMDs into synchronous TDD n79 n79 operation btw n77 and n79, So MSDstudy is not necessary. DC_21A_n79A — 2^(nd) — RAN4 agreed the IMD intosynchronous TDD n77 operation btw n77 and n79, So MSD study is notnecessary. B21 + DC_21A_n78A — 2^(nd) & 4^(th) — These IMD problem aren78 + IMDs into FFS. If consider n79 n79 synchronous TDD operation btwn78 and n79, MSD study is not necessary. DC_21A_n79A — 2^(nd) — The IMDproblem are IMD into FFS. If consider n78 synchronous TDD operation btwn78 and n79, MSD study is not necessary. B21 + DC_21A_n77A 7th & 8^(th)— — No harmonics problems n77 + harmonics from by 7^(th) & 8^(th) orderbetween n257 n77 into n257 FR1 and FR2 DC_21A_n257A — — — No issuesB21 + DC_21A_n78A 7^(th) & 8^(th) — — No harmonics problems n78 +harmonics from by 7^(th) & 8^(th) order between n257 n78 into n257 FR1and FR2 DC_21A_n257A — — — No issues B21 + DC_21A_n79A — — — Harmonicproblem will be n79 + solved in DC_n79A-n257A n257 (6^(th) order)DC_21A_n257 — — — No issues

Table 23 shows self-interference that may occur in the LTE-NR DCcombination of 4DL/2UL.

TABLE 23 Interference due to small downlink band uplink DC frequencysetup setup harmonic IMD isolation MSD B1 + B7 + DC_1A_n3A 2^(nd) 2^(nd)& 4^(th) Yes Harmonic problems will be n3 + n78 harmonic IMDs covered inDC_n3A-n78A. from n3 into n78 2^(nd) &4^(th) IMDs problems will be inton78 covered in DC_1A_n3A-n78A. Small freq. gap was covered in Table7.3.1A-0bA in TS36.101 DC_1A_n78A — 2^(nd) IMD — These IMD problems willbe into n3 covered in DC_1A-n3A-n78A and 4^(th) IMD DC_1A-7A_n78A. intoB7 DC_7A_n3A 2^(nd) 3^(rd) IMD — Harmonic problem will be harmonic inton78 solved in DC_n3A-n78A from n3 3^(rd) IMD problem will be into n78covered in DC_7A_n3A-n78A. DC_7A_n78A — 3^(rd) & 4^(th) — These IMDsproblem will be IMDs covered in DC_7A_n1A-n78A and into n3DC_7A_n3A-n78A. 4^(th) IMD into n1 B1 + B20 + DC_1A_n3A 2^(nd) 2^(nd) &4^(th) Yes Harmonic problems will be n3 + n78 harmonic IMDs covered inDC_n3A-n78A. from n3 into n78 2^(nd) &4^(th) IMDs problems will be inton78 covered in DC_1A_n3A-n78A. Small freq. gap was covered in Table7.3.1A-0bA in TS36.101 DC_1A_n78A — 2^(nd) IMD — These IMD problems willbe into n3 covered in DC_1A_n3A-n78A and 5^(th) IMD DC_1A-20A _n78A intoB20 DC_20A_n3A 2^(nd) 3^(rd) & 5^(th) — These harmonic problems will beharmonic IMDs covered in DC_n3A-n78A and from n3 into n78 DC_20A_n78A.into n78 These IMD problems will be 4^(th) covered in DC_20A_n3A-78A.harmonic from B20 into n78 DC_20A_n78A — 3^(rd) IMD — These IMD problemswill be into n3 covered in DC_20A_n1A-n78A and 3^(rd) IMDDC_20A_n3A-n78A. into n1 B3 + B7 + DC_3A_n1A 2^(nd) 2^(nd) & 4^(th) YesHarmonic problems will be n1 + n78 harmonic IMDs covered in DC_3A_n78A.from 3 into n78 These IMD problems will be into n78 covered inDC_3A_n1A-n78A. Small freq. gap was covered in Table 7.3.1A-0bA inTS36.101 DC_3A_n78A — 5^(th) IMD — 5^(th) IMD problems will be into n1covered in DC_3A_n1A-n78A. DC_7A_n1A — 4^(th) & 5^(th) — 4^(th) & 5^(th)IMDs problem will be IMDs covered in DC_7A_n1A-n78A. into n78 DC_7A_n78A— 3^(rd) & — These IMDs problem will be 4^(th) IMDs covered inDC_7A_n1A-n78A and into B3 DC_3A-7A-n78A. 4^(th) IMD into n1 B3 + B20 +DC_3A_n1A 2^(nd) 2^(nd) & 4^(th) Yes Harmonic problems will be n1 + n78harmonic IMDs covered in DC_3A_n78A. from 3 into n78 These IMD problemswill be into n78 covered in DC_3A_n1A-n78A. Small freq. gap was coveredin Table 7.3.1A-0bA in TS36.101 DC_3A_n78A — 5^(th) IMD — 5^(th) IMDproblems will be into n1 covered in DC_3A_n1A-n78A. DC_20A_n1A 4^(th)3^(rd) IMD — Harmonic problem will be harmonic into n78 solved inDC_20A_n78A from B20 3^(rd) IMD issue will be into n78 covered inDC_20A_n1A-n78A DC_20A_n78A — 3^(rd) IMD — These IMD problems will beinto B3 covered in DC_20A_n1A-78A and 3^(rd) IMD DC_3A-20A_n78A. into n1B7 + B20 + DC_7A_n1A — 5^(th) IMD — The IMD issue should be n1 + n3 intoB20 covered in 3DL DC_7A-20A_n1A in TR37.863-02-01 DC_7A_n3A — 2^(nd)IMD — The IMD issue should be into B20 covered in 3DL DC_7A-20A_n3Aw/2UL_DC_7A-n3A in TR37.863-02-01 DC_20A_n1A — — — No issue DC_20A_n3A —2^(nd) & 3^(rd) — The IMD issue should be IMDs covered in 3DLDC_7A-20A_n3A into B7 w/2UL_DC_20A-n3A in TR37.863-02-01 B7 + B20 +DC_7A_n1A — 5^(th) IMD — The IMD issue should be n1 + n78 into B20covered in 3DL DC_7A-20A_n1A 4^(th) & 5^(th) in TR37.863-02-01 IMDs4^(th) & 5^(th) IMDs problem will be into n78 covered in DC_7A_n1A-n78A.DC_7A_n78A — 4^(th) IMD — These IMD problems will be into n1 covered inDC_7A_n1A-n78A and 2^(nd) & 5^(th) DC_7A-20A_n78A. IMD into B20DC_20A_n1A 4^(th) 3^(rd) IMD — Harmonic problem will be harmonic inton78 solved in DC_20A_n78A from B20 3^(rd) IMD issue will be into n78covered in DC_20A_n1A-n78A DC_20A_n78A — 3^(rd) IMD — These IMDs issuewill be into n1 covered in DC_20A_n1A-n78A and 2^(nd) IMD DC_7A-20A_n78Ainto B7 B7 + B20 + DC_7A_n3A 2^(nd) 2^(nd) IMD — Harmonic problem willbe n3 + n78 harmonic into B20 solved in DC_n3A-n78A from n3 3^(rd) IMDThese IMDs issue will be into n78 into n78 covered in DC_7A-20A_n3A andDC_7A_n3A-n78A DC_7A_n78A — 3^(rd) & 4^(th) — These IMD problems will beIMDs covered in DC_7A_n3A-n78A and into n3 DC_7A-20A_n78A. 2^(nd) &5^(th) IMD into B20 DC_20A_n3A 2^(nd) 2^(nd) & 3^(rd) — Harmonic problemwill be harmonic IMDs solved in DC_n3A-n78A and from n3 into B7DC_20A-n78A. into n78 3^(rd) & 5^(th) The IMD issue should be 4^(th)IMDs covered in DC_7A-20A-n3A and harmonic into n78 DC_20A_n3A-n78A fromB20 into n78 DC_20A_n78A — 3^(rd) IMD — These IMD problems will be inton3 covered in DC_20A_n3A-n78A and 2^(nd) IMD DC_7A-20A_n78A. into B7

Table 24 shows self-interference that may occur in the LTE-NR DCcombination of 5DL/2UL.

TABLE 24 Interference due to small Downlink band Uplink DC frequencysetup setup harmonic IMD isolation MSD B1 + B7 + DC_1A_n3A 2^(nd) 2^(nd)& 4^(th) Yes Harmonic problems will be B20 + n3 + harmonic IMDs coveredin DC_n3A-n78A. n78 from n3 into n78 2^(nd) &4^(th) IMDs problems willbe into n78 covered in DC_1A_n3A-n78A. Small freq. gap was covered inTable 7.3.1A-0bA in TS36.101 DC_1A_n78A — 2^(nd) IMD — These IMDproblems will be into n3 covered in DC_1A_n3A-n78A, 5^(th) IMDDC_1A-20A_n78A and into B20 DC_1A-7A_n78A. 4^(th) IMD into B7 DC_7A_n3A2^(nd) 2^(nd) IMD — Harmonic problem will be harmonic into B20 solved inDC_n3A-n78A from n3 3^(rd) IMD These IMDs issue will be into n78 inton78 covered in DC_7A-20A_n3A and DC_7A_n3A-n78A DC_7A_n78A — 4^(th) IMD— These IMD problems will be into B1 covered in DC_1A-7A_n78A, 3^(rd) &4^(th) DC_7A_n3A-n78A and IMDs DC_7A-20A_n78A. into n3 2^(nd) & 5^(th)IMD into B20 DC_20A_n3A 2^(nd) 2^(nd) & 3^(rd) — Harmonic problems willbe harmonic IMDs solved in CA_n3A-n78A from n3 into B7 The 2^(nd) &3^(rd) IMDs issue into n78 3^(rd) & 5^(th) should be covered in IMDs 3DLDC_7A-20A_n3A into n78 w/2UL_DC_20A-n3A in TR37.863-02-01. The3^(rd)&5^(th) IMDs issue should be covered in 3DL DC_20A_n3A-n78Aw/2UL_DC_20A-n3A. DC_20A_n78A — 3^(rd) IMD — These IMD problems will beinto B1 covered in DC_1A-20A_n78A, 3^(rd) IMD DC_20A_n3A-n78A and inton3 DC_7A-20A_n78A. 2^(nd) IMD into B7 B3 + B7 + DC_3A_n1A 2^(nd) 2^(nd)& 4^(th) Yes Harmonic problems will be B20 + n1 + harmonic IMDs coveredin DC_3A_n78A. n78 from B3 into n78 These IMD problems will be into n78covered in DC_3A_n1A-n78A. Small freq. gap was covered in Table7.3.1A-0bA in TS36.101 DC_3A_n78A — 5^(th) IMD — 5^(th) IMD problemswill be into n1 covered in DC_3A_n1A-n78A. DC_7A_n1A — 5^(th) IMD — TheIMD issue should be into B20 covered in 3DL DC_7A-20A_n1A 4^(th) &5^(th) in TR37.863-02-01 IMDs 4^(th) & 5^(th) IMDs problem will be inton78 covered in DC_7A_n1A-n78A. DC_7A_n78A — 4^(th) IMD — These IMDproblems will be into n1 covered in DC_7A_n1A_n78A, 3^(rd) & 4^(th)DC_3A-7A-n78A and IMDs DC_7A-20A_n78A. into B3 2^(nd) & 5^(th) IMD intoB20 DC_20A_n1A 4^(th) 3^(rd) IMD — Harmonic problem will be harmonicinto n78 solved in DC_20A_n78A from B20 3^(rd) IMD issue will be inton78 covered in DC_20A_n1A-n78A DC_20A_n78A — 3^(rd) IMD — These IMDproblems will be into n1 covered in DC_20A_n1A_n78A, 3^(rd) IMDDC_3A-20A_n78A and into B3 DC_7A-20A_n78A. 2^(nd) IMD into B7

On the basis of the assumptions according to Table 22 to Table 24, Table25 proposes MST test setup based on self-interference. Since the MSDlevels are measurement results, they may have an error of ±1 dB.

TABLE 25 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_1A_n3A- 1 IMD2 |f_(B1) +f_(n3)| 1950 5 25 2140 5 2.1 N/A n78A n3  1750 5 25 1845 5 n78 3700 1052 3700 10 28.4 1 IMD4 |3*f_(n3) − f_(B1)|   1950 5 25 2140 5 1.2 N/An3  1770 5 25 1865 5 n78 3360 10 52 3360 10 11.2 1 IMD2 |f_(n78) −f_(B1)| 1950 5 25 2140 5 1.9 N/A n78 3780 10 52 3780 10 n3  1735 5 251830 5 27.9 DC_1A_n78A- 1 IMD3 |2*f_(n78) − f_(B1)|  1950 5 25 2140 51.6 N/A n79A n78 3410 10 52 3410 10 n79 4870 40 216 4870 40 15.9 1 IMD5|2*f_(n79) − 3*f_(B1)| 1950 5 25 2140 5 0.4 N/A n79 4670 40 216 4670 40n78 3490 10 52 3490 10  4.6 DC_3A_n1A- n1 IMD2  |f_(n1) + f_(B3)| 1950 525 2140 5 2.1 N/A n78A 3 1750 5 25 1845 5 n78 3700 10 52 3700 10 28.4n1  IMD4 |3*f_(B3) − f_(n1)|  1950 5 25 2140 5 1.2 N/A 3 1770 5 25 18655 n78 3360 10 52 3360 10 11.2 3 IMD5 |2*f_(n78) − 3*f_(B3)| 1770 5 251865 5 0.3 N/A n78 3720 10 52 3720 10 n1  1940 5 25 2130 5 3.5DC_3A_n78A- 3 IMD3 |2*f_(n78) − f_(B3)|  1770 5 25 1865 5 1.7 N/A n79An78 3340 10 52 3340 10 n79 4910 40 216 4910 40 16.3 3 IMD5 |2*f_(n79) −3*f_(B3)| 1770 5 25 1865 5 0.5 N/A n79 4510 40 216 4510 40 n78 3710 1052 3710 10  4.2 DC_7A_n1A- n1  IMD4   |f_(B7) − 3*f_(n1)| 1970 5 25 21605 1.2 N/A n78A 7 2520 5 25 2640 5 n78 3390 10 52 3390 10 10.1 n1  IMD5 |3*f_(B7) − 2*f_(n1)| 1970 5 25 2160 5 0.3 N/A 7 2520 5 25 2640 5 n783620 10 52 3620 10  3.8 7 IMD4 |2*f_(n78) − 2*f_(B7)| 2530 5 25 2650 50.9 N/A n78 3610 10 52 3610 10 n1  1970 5 25 2160 5  9.0 DC_7A_n3A- 7IMD3 |2*f_(B7) − f_(n3)|  2560 5 25 2680 5 1.5 N/A n78A n3  1730 5 251825 5 n78 3390 10 52 3390 10 16.1 7 IMD3 |2*f_(B7) − f_(n78)|  2565 525 2685 5 1.4 N/A n78 3310 10 52 3310 10 n3  1725 5 25 1820 5 15.6 7IMD4 |2*f_(n78) − 2*f_(B7)| 2565 5 25 2685 5 0.8 N/A n78 3480 10 52 348010 n3  1735 5 25 1830 5  9.2 DC_19A_n78A- 19  IMD2  |f_(n78) + f_(B19)|835 5 25 880 5 2.4 N/A n79A n78 3680 10 52 3680 10 n79 4515 40 216 451540 29.3 19  IMD3   |f_(n78) + 2*f_(B19)| 835 5 25 880 5 2.0 N/A n78 331010 52 3310 10 n79 4980 40 216 4980 40 16.8 19  IMD4  |2*f_(n78) −2*f_(B19)| 835 5 25 880 5 1.3 N/A n78 3310 10 52 3310 10 n79 4950 40 2164950 40 11.5 19  IMD5  |2*f_(n78) − 3*f_(B19)| 835 5 25 880 5 0.7 N/An78 3680 10 52 3680 10 n79 4855 40 216 4855 40  5.2 19  IMD2  |f_(n79) −f_(B19)| 835 5 25 880 5 2.2 N/A n79 4550 40 216 4550 40 n78 3715 10 523715 10 28.8 19  IMD3   |f_(n79) − 2*f_(B19)| 835 5 25 880 5 1.6 N/A n794980 40 216 4980 40 n78 3310 10 52 3310 10 16.3 DC_20A_n1A- 20  IMD3  |f_(n1) + 2*f_(B20)| 845 5 25 804 5 1.5 N/A n78A n1  1940 5 25 2130 5n78 3630 10 52 3630 10 16.0 20  IMD3   |f_(n78) − 2*f_(B20)| 835 5 25794 5 1.3 N/A n78 3790 10 52 3790 10 n1  1930 5 25 2120 5 15.3DC_20A_n3A- 20  IMD3 |2*f_(B20) + f_(n3)|   845 5 25 804 5 1.5 N/A n78An3  1730 5 25 1825 5 n78 3420 10 52 3420 10 16.1 20  IMD5 |2*f_(B20) −3*f_(n3)|  845 5 25 804 5 0.4 N/A n3  1730 5 25 1825 5 n78 3500 10 523500 10  4.5 20  IMD3  |2*f_(B20) − 2*f_(n78)| 845 5 25 804 5 1.3 N/An78 3550 10 52 3550 10 n3  1765 5 25 1860 5 15.7 DC_21A_n78A- 21  IMD2 |f_(n78) + f_(B21)| 1453 5 25 1501 5 2.6 N/A n79A n78 3420 10 52 342010 n79 4873 40 216 4873 40 30.1 21  IMD4  |2*f_(n78) − 2*f_(B21)| 1453 525 1501 5 1.0 N/A n78 3780 10 52 3780 10 n79 4654 40 21 4654 40 11.3 21 IMD2  |f_(n79) − f_(B21)| 1453 5 25 1501 5 2.5 N/A n79 4940 40 216 494040 n78 3487 10 52 3487 10 29.8

Here, the DC harmonic problem is also present between 6 GHz or lower andmmWave as shown in Table 26 below.

TABLE 26 LTE band NR band (MHz) NR UL 26500-29500 band range Harm.Harmonic range (FR1) (MHz) Order (MHz) harmonic/IMD n79 4400-5000 6x26400-30000 1) Harmonic into NR (worst case) 2) No IMD into n79 3) NoIMD into n257

According to Table 26, since 6^(th) harmonic falls on the reception bandof n257, the worst case in the harmonic problem according to the DC bandcombination is DC_n79A-n257A. Thus, in the third disclosure, sixthharmonic in the DC_n79A-n257A combination is examined. Hereinafter,impact of the harmonic which may fall from mmWave to NR band isexamined.

Analysis of Harmonic in NR (n257)

Currently, an LTE (4G) modem and a 5G (NR) modem may be separatelydeveloped and fused as telephony elements. In addition, the antenna maybe used separately in the LTE band and the mmWave NR band. Based on theRF architecture, the MSD level in the n257 by the sixth harmonic may bederived.

Table 27 shows RF component isolation parameters of the DC_n79A-n257Aterminal to derive the MSD level in mmWave.

TABLE 27 Option 1: W/O HTF Primary Parameter Value H6 level n79 Tx in PAoutput 28 n79 PA H6 attenuation 65 −37 n79 duplexer H6 attenuation 30−67 Harmonic filter 0 −67 HB switch H6 −100 −67 Diplexer attenuation 25−92.0 Antenna isolation 10 −102.0 mmW switch attenuation 0.7 −102.7 mmWswitch H6 −110 −102.0 n257 Rx filter atten. 1.5 −103.5 n257 Rx filter H6−110 −102.6 n79 PA to n257 LNA isolation 60 −97.0 Composite −95.9

Table 28 shows an MSD level for the DC_n79A-n257A derived from Table 27.More precisely, it represents an MSD level for NR band n257 having achannel bandwidth (CBW) of 50 MHz.

TABLE 28 W/O HTF H6 level Thermal (dBm) Estimated Sensitivity (dB) MainPath −94.8 −95.9 −92.3 Current sensitivity [−92.1~−85.7] level at n257dBm/50 MHz

Based on the MSD in Table 28, the MSD is proposed as follows.

-   -   Proposal 1: MSD based on sixth harmonic in DC_n79A-n257A may be        0 dB

Other MSD Analysis

Table 29 shows terminal RF front-end component parameters for derivingMSD levels at 6 GHz or lower.

TABLE 29 Triplexer-diplexer Architecture w/separate ant. DC_1A-42A_n79A,DC_3A-42A_n79A, DC_19A-42A_n79A UE ref. Architecture IP2 IP3 IP4 IP5Component (dBm) (dBm) (dBm) (dBm) Ant. Switch 112 68 55 55 Triplexer 11582 55 55 Quadplexer 110 72 55 52 Diplexer 115 87 55 55 Duplexer 100 7555 53 PA Forward 28.0 32 30 28 PA Reversed 40 30.5 30 30 LNA 10 0 0 −10

Table 30 shows isolation levels according to RF components.

TABLE 30 Value Isolation Parameter (dB) Comment Antenna to Antenna 10Main antenna to diversity antenna PA (out) to PA (in) 60 PCB isolation(PA forward mixing) Triplexer 20 High/low band isolation Quadplexer 20L-L or H-M band isolation Diplexer 25 High/low band isolation PA (out)to PA (out) 60 L-H/H-L cross-band PA (out) to PA (out) 50 H-H cross-bandLNA (in) to PA (out) 60 L-H/H-L cross-band LNA (in) to PA (out) 50 H-Hcross-band Duplexer 50 Tx band rejection at Rx band

Based on Table 29 and Table 30, the MSD levels are proposed asillustrated in Table 31. Since the MSD levels correspond to measurementresults, they may have an error of about ±1 dB.

TABLE 31 E − 2*UTRA Band/Channel bandwidth/N_(RB)/Duplex mode EUTRA/NRDC UL/DL DL UL EUTRA/ UL F_(c) BW UL DL F_(c) MSD Duplex SourceConfiguration Configuration NR band (MHz) (MHz ) C_(LRB) (MHz) (dB) modeof IMD DC_1A- DC_42A_n79A 1 1975 5 25 2165 16.2 FDD IMD3 42A_n79A 42 3402.5 5 25 3402.5 N/A TDD N/A n79 4640 40 216 4640 N/A N/A DC_1A_n79A 11977.5 5 25 2167.5 N/A FDD N/A 42  3490 5 25 3490  4.5 TDD IMD5 n79 442040 216 4420 N/A N/A DC_3A- DC_42A_n79A 3 1760 5 25 1855 17.1 FDD IMD342A_n79A 42  3402.5 5 25 3402.5 N/A TDD N/A n79 4950 40 216 4950 N/A N/ADC_3A_n79A 3 1780 5 25 1875 N/A FDD N/A 42  3500 5 25 3500  3.9 TDD IMD5n79 4420 40 216 4420 N/A N/A DC_19A- DC_42A_n79A 19 842.5 5 25 887.520.6 FDD IMD2 42A_n79A 42 3517.5 5 25 3517.5 N/A TDD N/A n79 4420 40 2164420 N/A N/A

Also, the MSD due to the occurrence of the IMD needs to specify asensitivity level (desense level) for the DC band combination (LTE(3DL/1UL)+NR (1DL/1UL)) having the IMD problem. Table 32 below shows theIMD problem for LTE (3DL/1UL)+NR (1DL/1UL) DC band combinations.

TABLE 32 Interference due to small Downlink Uplink DC frequency bandsetup setup Harmonic IMD isolation MSD B1 + B18 + DC_1A- 5^(th) IMD into— 5^(th) IMD will be B28 + n77 n77A B18 discussed later 5^(th) IMD intoB28 DC_18A- — 3^(rd) IMD into B1 — 3^(rd) & 5^(th) IMD will be n77A5^(th) IMD into discussed later B28 DC_28A- 3^(rd) IMD into B1 3^(rd) &5^(th) IMD will n77A 5^(th) IMD into be discussed later B18 B1 + B18 +DC_1A- 5^(th) IMD into — 5^(th) IMD will be B28 + n78 n78A B18 discussedlater 5^(th) IMD into B28 DC_18A- 3^(rd) IMD into B1 — 3^(rd) IMD willbe n78A discussed later DC_28A- — 3^(rd) IMD into B1 — 3^(rd) & 5^(th)IMD will be n78A 5^(th) IMD into discussed later B18

Based on Table 32, test setup and MSD levels are proposed as illustratedin Table 33. Since the MSD levels correspond to measurement results,they may have an error of about ±1 dB.

TABLE 33 UL UL DL DL DC UL F_(c) BW UL F_(c) BW CF MSD bands DC IMD(MHz) (MHz) RB # (MHz) (MHz) (dB) (dB) DC_1A-18A-  1 IMD5   |2*f_(B77) −3*f_(B1)| 1960 5 25 2150 5 0.7 N/A 28A_n77A n77 3330 10 52 3330 10 28725 5 25 780 5 4.3 18 IMD3 |2*f_(B18) − f_(B77)| 825 5 25 870 5 1.8 N/An77 3770 10 52 3770 10  1 1930 5 25 2120 5 16.4  18 IMD5 |4*f_(B18) −f_(B77)| 820 5 25 865 5 0.7 N/A n77 4058 10 52 4058 10 28 723 5 25 778 54.4 28 IMD3 |2*f_(B28) − f_(B77)| 740 5 25 795 5 1.5 N/A n77 3630 10 523630 10  1 1960 5 25 2150 5 15.8  28 IMD5 |4*f_(B28) − f_(B77)| 723 5 25778 5 0.5 N/A n77 3757 10 52 3757 10 18 820 5 25 865 5 3.9 DC_1A-18A-  1IMD5   |3*f_(B1) − 2*f_(n78)| 1970 5 25 2160 5 0.6 N/A 28A_n78A n78 335210 52 3352 10 28 739 5 25 794 5 4.2 18 IMD3 |2*f_(B18) − f_(B78)| 819 525 864 5 1.8 N/A n78 3758 10 52 3758 10  1 1930 5 25 2120 5 16.4  28IMD3 |2*f_(B28) − f_(B78)| 740 5 25 795 5 1.5 N/A n78 3630 10 52 3630 10 1 1960 5 25 2150 5 15.7  28 IMD5 |4*f_(B28) − f_(n78)|  723 5 25 778 50.5 N/A n78 3756 10 52 3756 10 18 819 5 25 864 5 3.8

The test setup and MSD levels are defined in the MSD requirements of TR37.863-02-01 and TS 38.101-3.

The above description can be realized by hardware.

FIG. 10 is a block diagram illustrating a wireless communication systemin which a disclosure of the present specification is implemented.

The base station 200 includes a processor 210, a memory 220, and a radiofrequency (RF) unit 230. The memory 220 is connected with the processor210 to store various pieces of information for driving the processor210. The RF unit 230 is connected with the processor 210 to transmitand/or receive a radio signal. The processor 210 implements a function,a process, and/or a method which are proposed. In the aforementionedembodiment, the operation of the base station may be implemented by theprocessor 210.

UE 100 includes a processor 110, a memory 120, and an RF unit 130. Thememory 120 is connected with the processor 110 to store various piecesof information for driving the processor 110. The RF unit 130 isconnected with the processor 110 to transmit and/or receive the radiosignal. The processor 110 implements a function, a process, and/or amethod which are proposed.

The processor may include an application-specific integrated circuit(ASIC), another chip set, a logic circuit and/or a data processingapparatus. The memory may include a read-only memory (ROM), a randomaccess memory (RAM), a flash memory, a memory card, a storage medium,and/or other storage device. The RF unit may include a baseband circuitfor processing the radio signal. When the embodiment is implemented bysoftware, the aforementioned technique may be implemented by a module (aprocess, a function, and the like) that performs the aforementionedfunction. The module may be stored in the memory and executed by theprocessor. The memory may be positioned inside or outside the processorand connected with the processor by various well-known means.

In the aforementioned exemplary system, methods have been describedbased on flowcharts as a series of steps or blocks, but the methods arenot limited to the order of the steps of the present invention and anystep may occur in a step or an order different from or simultaneously asthe aforementioned step or order. Further, it can be appreciated bythose skilled in the art that steps shown in the flowcharts are notexclusive and other steps may be included or one or more steps do notinfluence the scope of the present invention and may be deleted.

What is claimed is:
 1. A device configured to operate in a wirelesssystem, the device comprising: a transceiver configured with an EvolvedUniversal Terrestrial Radio Access (E-UTRA)—New Radio (NR) DualConnectivity (EN-DC), wherein the EN-DC is configured to use two bands,a processor operably connectable to the transceiver, wherein theprocesser is configured to: control the transceiver to receive adownlink signal, control the transceiver to transmit an uplink signalvia the two bands, wherein a value of Maximum Sensitivity Degradation(MSD) is applied to a reference sensitivity for receiving the downlinksignal, wherein the value of the MSD is pre-configured for a combinationof bands 21 and n79, wherein the value of the MSD is 18.4 dB for band 21based on the combination of bands 21 and n79.
 2. The device of claim 1,wherein for the combination of bands 21 and n79, the band 21 is used forthe E-UTRA and the band n79 is used for the NR.
 3. A device configuredto operate in a wireless system, the device comprising: a transceiverconfigured with an Evolved Universal Terrestrial Radio Access(E-UTRA)—New Radio (NR) Dual Connectivity (EN-DC), wherein the EN-DC isconfigured to use three bands, a processor operably connectable to thetransceiver, wherein the processer is configured to: control thetransceiver to receive a downlink signal, control the transceiver totransmit an uplink signal via at least two bands among the three bands,wherein a value of Maximum Sensitivity Degradation (MSD) is applied to areference sensitivity for receiving the downlink signal, wherein thevalue of the MSD is pre-configured for a first combination of bands 1,n78 and n79, a second combination of band 3, n78 and n79, a thirdcombination of bands 19, n78 and n79, a fourth combination of bands 21,n78 and n79.
 4. The device of claim 3, wherein the value of the MSD is18.4 dB for band n79 based on the first combination of bands 1, n78 andn79, wherein the value of the MSD is 4.6 dB for band n78 based on thefirst combination of bands 1, n78 and n79.
 5. The device of claim 3,wherein the value of the MSD is 16.3 dB for band n79 based on the secondcombination of bands 3, n78 and n79, wherein the value of the MSD is 4.2dB for band n78 based on the second combination of bands 3, n78 and n79.6. The device of claim 3, wherein the value of the MSD is 29.3 dB forband n79 based on the third combination of bands 19, n78 and n79,wherein the value of the MSD is 28.8 dB for band n78 based on the thirdcombination of bands 19, n78 and n79.
 7. The device of claim 3, whereinthe value of the MSD is 30.1 dB for band n79 based on the fourthcombination of bands 21, n78 and n79, wherein the value of the MSD is29.8 dB for band n78 based on the fourth combination of bands 21, n78and n79.
 8. The device of claim 1, wherein for the first combination ofbands 1, n78 and n79, the band 1 is used for the E-UTRA and the bandsn78 and n79 are used for the NR, wherein for the second combination ofbands 3, n78 and n79, the band 3 is used for the E-UTRA and the bandsn78 and n79 are used for the NR, wherein for the third combination ofbands 19, n78 and n79, the band 19 is used for the E-UTRA and the bandsn78 and n79 are used for the NR, wherein for the fourth combination ofbands 21, n78 and n79, the band 21 is used for the E-UTRA and the bandsn78 and n79 are used for the NR.